K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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Any undefined command inputs are prohibited except for above command set of Table 1. The device may output random data in a page instead of the consecutive sequential data by writing random data output command. Do not erase or program factory-marked bad blocks. AC Waveforms for Power Transition 1. The said additional block failure k9f2g08i0m does not include those reclaimed blocks.
(PDF) K9F2G08U0M Datasheet download
Invalid blocks are defined as blocks that contain one or more bad bits. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The device may include invalid blocks when first catasheet. It is an open drain output k9f2g08i0m does not float to high-z condition when the chip is deselected or when outputs are disabled.
K9F2G08U0M 데이터시트(PDF) – Samsung semiconductor
The memory array is made up of 32 cells that are serially connected to form a NAND structure. The M byte X8 device or M word X16 device physical space requires 29 X8 or 28 X16 addresses, thereby requiring five cycles for k9f2g008u0m However, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula.
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If program operation results in an error, map out the block including the page in error and copy the target data to another block. Refer to the attached technical notes for appropriate management of invalid blocks.
The column datashheet for the next data, which will be entered, may be changed to the address which follows random data input command 85h. Exposure to absolute maximum rating conditions for extended periods may affect reliability. You may also ddatasheet interested in: To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time tCBSY and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data registers.
Refer to table 3 for device status after reset operation. The column address of next data, which is going to be out, may be changed to the catasheet which follows random data output command.
The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed. A recovery time of minimum 10? PRE pin controls activation of autopage read function. Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device.
Total 1, NAND cells reside in a block. The command register remains in Status Read mode until further commands are issued to it. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors.
Faithfully describe 24 hours delivery 7 days Changing or Refunding. Refer to table 2 for specific Status Register definitions. Rp VCC ibusy 1. The Program Confirm command 10h is required to actually begin the programming operation. VIL can undershoot to C Vcc Vss N. The definition and value of setup and hold time are changed. A byte X8 device or word X16 device data register and a byte X8 device or word X16 device cache register are serially connected to dtasheet other.