28C datasheet, 28C pdf, 28C data sheet, datasheet, data sheet, pdf, Atmel, K 32K x 8 Paged CMOS E2PROM. 28C Microchip. K (32K x 8) CMOS Electrically Erasable PROM. PIN CONFIGURATION. Top View. A 1 A7. A A *NC. Vcc. WE. . A2. 5 WE. A dimensions section on page 14 of this data sheet. ORDERING INFORMATION. PLCC−32 . 28C− 28C− Units. Min. Max. Min. Max. tRC.
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It should be noted, that once protected the host may still perform a byte or page write to the AT28C Input Test Waveforms and Measurement Level. All command se- quences must conform to the page write timing specifica- tions.
After writing the 3-byte command sequence and after t. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indi- cated in the operational sections of this specification is not implied.
Refer to AC Programming Waveforms. OE may be delayed up to t. OE to Output Delay. The page write operation of the AT28C allows 1 to dataheet of data to be written into the device during a single internal programming period.
Please see Soft- ware Chip Erase application note for details. The data in the enable and disable command se- quences is not written to the device and the memory ad- dresses used in the sequence may be written with data in either a byte or page write operation.
Hardware features protect against inadvertent writes to datashert AT28C in the follow- ing ways: By raising A9 to 12V. Fast Read Access Time – ns. PROM memory are available to the user for device. The data is latched by the first rising edge of CE or WE. Page Write Cycle Time: Hardware and Software Data Protection.
28C 데이터시트(PDF) – ATMEL Corporation
Fast Write Cycle Times. The bytes may be loaded in any order and may be altered within the same load 28c26. Once the end of a write cycle has been detected a new access for a read or write can begin.
Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. Atmel’s 28C has additional features to ensure high quality and manufacturability. Reading the toggle bit may begin at any time during the write cycle.
28C256 Datasheet PDF
CE may be delayed up to t. This dual- line control gives designers flexibility in preventing bus contention in their system. 28c526 has incorporated both hardware and software features that will protect the memory against inadvertent writes. Stresses beyond those listed under “Absolute Maxi. A software controlled data protection feature has been implemented on the AT28C An optional software data protection mechanism is available to guard against inad- vertent writes.
28C 데이터시트(PDF) – Xicor Inc.
A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 63 addi- tional bytes. Its K of memory is organized as 32, words by 8 bits. Each successive byte must be written within The device contains a byte page register to allow writ- ing of up to bytes simultaneously.
All bytes dur- ing a page write operation must reside on the same page as defined by the state of the A6 – A14 inputs. When enabled, the software data protection SDPwill prevent inadvertent writes. Address to Output Delay.
All Output Voltages xatasheet Respect to Ground The entire device datasheey be erased using a 6-byte software code. X can be V. The outputs are put in the high impedance state when either CE or OE is high. DATA Polling may begin at anytime during the write cycle. Datasueet a byte write has been started it will automatically time itself to completion.
The A0 to A5 inputs are used to specify which bytes within the page are to be written. The address is latched on the falling edge of CE or WE, datasgeet occurs last. Dataxheet a programming operation has been initiated and for the duration of t.
When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. Automatic Page Write Operation. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer.
During a write cycle, the addresses and 1 to bytes of data are internally latched, freeing the address and data bus for other opera- tions. Manufac- tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to ns with power dissipation of just mW. If precautions are not taken, inad- vertent writes may occur during transitions of the host sys- tem power supply. Search field Part name Part description.
Once set, SDP will remain active unless the disable com- mand sequence is issued.
The dataasheet utilizes internal error correction for extended endurance and improved data retention characteristics. This is done by pre- ceding the data to be written by the same 3-byte command sequence used to enable SDP.